Nanoscale Quantum Physics Group

Dongmin Chen

Senior Rowland Fellow
Rowland Institute at Harvard
Harvard University
100 Edwin H. Land Blvd.
Cambridge, MA 02120

chen@rowland.harvard.edu
Tel: 617-497-4629
Fax: 617-497-4627

Publications

• Yi, W; MoberlyChan W; Narayanamurti V; Hu Y F; Li Q; Kaya I; Burns M; Chen DM, “Characterization of spinel iron-oxide nanocrystals grown on Fe whiskers”, Journal of Applied Physics, 95, 7136-7138 (2004).



• Hou, J.G.; Wang, Bing; Yang, Jinlong; Wang, Kedong; Lu, Wei; Li, Zhenyu; Wang, Haiqian; Chen, D. M.; Zhu, Qingshi, “Disorder and Suppression of Quantum Confinement Effects in Pd Nanoparticles”, Phys. Rev. Lett. 90, 246803 (2003).



• Yuan, Lan-Feng; Yang, Jinlong; Wang, Haiqian; Zeng, Changgan; Li, Qunxiang; Wang, Bing; Hou, J. G.; Zhu, Qingshi; Chen, D. M., “Low-temperature orientationally ordered structures of two-dimensional C60”, Journ. Am. Chem. Soc. 125, 169-172 (2003).



• Okamoto, H., Chen, D.M., Yamada, T., “Competing Classical and Quantum Effects in Shape Relaxation of a Metallic Island,” Phys. Rev. Lett. 89, 256101 (2002).



• Altfeder, I.B. Narayanamurti,V. Chen, D.M. “ Imaging Subsurface Reflection Phase with Quantized Electrons”, Phys. Rev. Lett. 88, 206801 (2002).



• Okamoto, H., Chen, D.M., “An ultrahigh vacuum dual-tip scanning tunneling microscope operating at 4.2 K”, Rev. Sci. Inst. 72, 4398-4403 (2001).



• Okamoto, H., Chen, D.M., “Method for navigating two scanning probes to a common point without additional microscopes”, Journ. Vac. Sci. Technol. A 19, 1822-1824 (2001).



• Okamoto, H., Chen, D.M., “A low-loss, ultrahigh vacuum compatible helium cryostat without liquid nitrogen shield”, Rev. Sci. Inst. 72, 1510-1513 (2001).



• Chen, D.M. “Electron fringes and standing wave states in a quantum wedge”, Journ. Elect. Spec. Rel. Phen., 109, 85-96 (2000).



• I. B. Altfeder and D. M. Chen, “Bistability in Scanning Tunneling Spectroscopy of Ga-Terminated Si(111)”, Phys. Rev. Lett., 84, 1284-1287 (2000).



• D. V. Klyachko, D.M.Chen, “Cluster shapes in STM images of isolate clusters and cluster materials”, Surf. Sci., 446, 98-102 (2000).



• D. V. Klyachko, J.-M. Lopez-Castillo, and J.-P. Jay-Gerin, D. M. Chen, “Stress relaxation via the displacement domain formation in films of C₆₀ on Ge (100)”, Phys. Rev. B, 60, 9026-9036 (1999).



• I. B. Altfeder, D. M. Chen and K. A. Matveev, “Imaging Buried atomic lattices with Quantized electrons”, Phys. Rev. Lett., 80, 4895 (1998).



• L. Ruan and D. M. Chen, “Pinhole formation in solid phase epitaxial film of CoSi2 on Si(111)”, Appl. Phys. Lett., 72, 3464 (1998).



• I. B. Altfeder, and D. M. Chen, “Direct Three-dimensional Characterization of Buried Interfacial Morphology with Quantized Electron Waves”, Journ. Surf. Anal., 4, 303-306 (1998).



• D. M. Chen and I. B. Altfeder, “Probing periodic Properties of ‘Artificial Elements’ Assembled in a Quantum Wedge”, in electronic journal: Nanotechnology, (1997).



• L. Ruan and D. M. Chen, “Nesting of C₆₀ around Au Clusters on a C₆₀ Crystallite” , Surf. Sci. Lett. 393, L113-L118, (1997).



• J.C. Dunphy, D. Klyachko, Hang Xu, and D. M. Chen, “A Novel Bi-directional Step-flow Growth Mode: C₆₀ on Ge(100) and GaAs(110)”, Surf. Sci. Lett., 383, L760-L765 (1997).



• D. Klyachko, and D. M. Chen, “Growth and Characterization of Si and Ge Clusters on Ordered C₆₀ Overlayers”, J. Vac. Sci. Technol. B, 15, 1295 (1997).



• I. B. Altfeder, K. A. Matveev, and D. M. Chen, “Electron Fringes on a Quantum Wedge”, Phys. Rev. Lett. 78, 2815 (1997).



• D. Klaychko, and D.M. Chen, “The Growth of an Uniaxial Incommensurate C60 Lattice on Ge(100)2x1”, J. Vac. Sci. Technol. B, 14, 974 (1996).



• D. Klaychko, and D.M. Chen, “The Ordering of C₆₀ on Anisotropic Surfaces”, Phys. Rev. Lett., 75, 3693 (1995).



• D.M. Chen, “STM studies of molecular and solid C₆₀ on Si and Ge surfaces”, Proc. Of the 187th Meeting of the Electrochemical Society, Reno, USA, 1995.



• S. K. Theiss, D.M. Chen, and J. A. Golovchenko, “Three-state lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy”, Appl. Phys. Lett., 66, 448 (1995).



• Hang Xu, D. M. Chen, and W. N. Creager, “C60-Induced Reconstruction of the Ge(111) Surface”, Phys. Rev. B, 50, 8454-8459 (1994).



• D. M. Chen, H. Xu, and W.N. Creager and Paul Burnett, “Formation of Crystalline Islands of C60 on Si(111)”, J. Vac. Sci. Technol. B, 12(3), 1910 (1994).



• S. K. Theiss, D. M. Chen, and J. A. Golovchenko, “Measurement of Lattice Relaxation During Epitaxy Using Scanning Tunneling Microscopy: Ge on Si(111)”, Mat. Res. Soc. Symp. Proc., 317 , 15(1994).



• Hang Xu, D.M. Chen, and W.N. Creager, “Double Domain Solid C60 on Si(111)-7x7”, Phys. Rev. Lett. , 70, 1850 (1993).



• K. Mortensen, D.M. Chen, P.J. Bedrossian, and J.A. Golovchenko, “Two reaction channels directly observed for atomic hydrogen on the Si(111)-7x7 Surface,” Phys. Rev., B43, 1816 (1991).



• P.J. Bedrossian, K. Mortensen, D.M. Chen, and J.A. Golovchenko, “Probing atomically inhomogeneous surfaces with tunneling microscopy,” Nuclear Instr. and Methods in Phys. Res., B48, 296-305 (1990).



• P.J. Bedrossian, K. Mortensen, D.M. Chen, and J.A. Golovchenko, “Adatom registry on Si(111)-v3Xv3R30?-B,” Phys. Rev., B41, 7545 (1990).



• P.J. Bedrossian, D.M. Chen, K. Mortensen, and J.A. Golovchenko, “Demonstration of the tunnel-diode effect on an atomic scale,” Nature, 342, 258-260 (1989).



• P.J. Bedrossian, R. Meade, K. Mortensen, D.M. Chen, J.A. Golovchenko, and D. Vanderbilt, “Surface doping and stabilization of Si(111) with boron,” Phys. Rev. Lett., 63, 1257 (1989).



• J.R. Patel, J. Zegenhagen, P.E. Freeland, M.S. Hybersen, J.A. Golovchenko, and D.M. Chen, “Arsenic and gallium on Si(111),” J. Vac. Sci. Tech., B7, 894 (1989).



• D.M. Chen, S. Berko, K.F. Canter, K.G. Lynn, A.P. Mills Jr., L.O. Roellig, P. Sferlazzo, M. Weinert, and R.N. West, “2D-ACAR study of positron interactions with surfaces of aluminum,” Phys. Rev., B39 , 3966 (1989).



• J. Zegenhagen, J. R. Patel, Paul. Freeland, D.M. Chen, J. A. Golovchenko, and P. Bedrossian, “X-Ray standing wave and tunneling microscope location of gallium atoms on a silicon surface,” Phys. Rev., B39 , 1298 (1989).



• D.M. Chen, J.A. Golovchenko, P. Bedrossian, and K. Mortenson, “Tunneling images of gallium atoms on a silicon surface with reconstructions, superlattices and incommensuration,” Phys. Rev. Lett., 61, 2867 (1988).



• D.M. Chen, S. Berko, K.F. Canter, K.G. Lynn, A.P. Mills, Jr., L.O. Roellig, P. Sferlazzo, M. Weinert, and R.N. West, “ Angle-resolved positronium emission spectroscopy,” Phys. Rev. Lett., 58, 921 (1987).



• K.G. Lynn, D.M. Chen, B. Nielsen, R. Pareja, S. Myers, “Variable-energy positron beam studies of Ni implanted with He,” Phys. Rev., B34, 1449 (1986).



• D.M. Chen, K.G. Lynn, R. Pareja, and B. Nielsen, “Measurement of positron reemission from thin single-crystal W(100) Films,” Phys. Rev., B31, 4123 (1985).