Nanoscale Quantum Physics Group

Group Publications

• Yi, W.; Kaya, I.I.; Altfeder, I.B.; Appelbaum, I.; D.M. Chen, and V. Narayanamurti, “Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces”, Rev. Sci. Instruments, 76, 063711 (2005).



• Yi, W.; MoberlyChan W.; Narayanamurti V.; Hu Y. F.; Li Q.; Kaya I.; Burns M.; Chen D.M., “Characterization of spinel iron-oxide nanocrystals grown on Fe whiskers”, Journal of Applied Physics, 95, 7136-7138 (2004).



• Chen, D.M., Yamada, T., “Quantum size effects in nanoscale metallic structures,” Third IEEE Conference on Nanotechnology, v.2, 52-55 (2003).



• Okamoto, H., Chen, D.M., Yamada, T., “Competing Classical and Quantum Effects in Shape Relaxation of a Metallic Island,” Physical Review Letters 89, 256101 (2002).



• Altfeder, I.B., Narayanamurti, V., Chen, D.M. “Imaging Subsurface Reflection Phase with Quantized Electrons”, Phys. Rev. Lett. 88, 206801 (2002).



• Okamoto, H., Chen, D.M., “An ultrahigh vacuum dual-tip scanning tunneling microscope operating at 4.2 K”, Rev. Sci. Inst. 72, 4398-4403 (2001).



• Okamoto, H., Chen, D.M., “Method for navigating two scanning probes to a common point without additional microscopes”, Journ. Vac. Sci. Technol. A, 19, 1822-1824 (2001).



• Okamoto, H., Chen, D.M., “A low-loss, ultrahigh vacuum compatible helium cryostat without liquid nitrogen shield”, Rev. Sci. Inst., 72, 1510-1513 (2001).



• Hou, J.G., Yang Jinlong, wang Haiqian, Liu Qunxiang, Zeng Changgan, Yuan Lanfeng, Wang Bin, D. M. Chen, and Zhu Qingshi, “Topology of two dimensional C60 domains” , Nature, 409, 18 (2001).



• I. B. Altfeder and D. M. Chen, “Bistability in Scanning Tunneling Spectroscopy of Ga-Terminated Si(111)”, Phys. Rev. Lett., 84, 1284-1287 (2000).



• D. Klyachko, D.M. Chen, “Cluster shapes in STM images of isolate clusters and cluster materials”, Surf. Sci. , 446, 98-102 (2000).



• Altfeder, I. B., Chen, D. M. and Matveev, K. A. “Imaging Buried atomic lattices with Quantized electrons”, Phys. Rev. Lett., 80, 4895 (1998).



• Ruan, L. and Chen, D. M. “Pinhole formation in solid phase epitaxial film of CoSi2 on Si(111)”, Appl. Phys. Lett., 72, 3464 (1998).



• Altfeder, I. B. and Chen, D. M. “Direct Three-dimensional Characterization of Buried Interfacial Morphology with Quantized Electron Waves”, Journ. Surf. Analy., 4, 303-306 (1998).



• Ruan, L. and Chen, D.M., “Nesting of C₆₀ around Au clusters on a C₆₀ crystallite”, Surface Science, 393, L113-L118 (1997).



• Altfeder, I.B., Matveev, K.A. and Chen, D.M. “Electron fringes on a quantum wedge”, Phys. Rev. Lett., 78, 2815-2818 (1997).



• Dunphy, J.C., Klyachko, D., Xu, H. and Chen, D.M. “A novel bi-directional step-flow growth mode in molecular epitaxy: C60 on Ge(100) and GaAs(110)”, Surf. Sci. Lett., 383, L760-L765 (1997).



• Klyachko, D. and Chen, D.M. “Ordering of C₆₀ on anisotropic surfaces”, Phys. Rev. Lett., 75, 3693 (1995).



• Theiss, S.K., Chen, D.M., Golovchenko, J.A., “Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy”, Appl. Phys. Lett., 66, 448-450, (1995).



• Chen, D.M., “STM studies of molecular and solid C60 on Si and Ge surfaces,”, Proceedings of the Symposium on Recent Advances in the Chemistry and Physics of Fullerenes and Related Materials, May 16-21, 1995, Reno, NV, R.S. Ruoff, and K.M. Kadish, eds. Pennington, NJ: Electrochemical Society, PV95-10, pp. 1311-1324, (1995).



• Theiss, S.K., Chen, D.M., Golovchenko, J.A., “Measurement of lattice relaxation during epitaxy using tunneling microscopy: Ge on Si(111),”, Materials Research Society Symposium Proceedings, 317, 15-20, (1994).



• Chen, D.M., Xu, H., Creager, W.N., Burnett, P., “Formation of crystalline islands of C60 on Si(111)”, J. Vac. Sci. Technol. B, 12, 1910-1913, (1994).



• Xu, H., Chen, D.M., Creager, W.N., “C60-Induced reconstruction of the Ge(111) surface”, Phys. Rev. B, 50, 8454-8459, (1994).



• Xu, H., Chen, D.M., Creager, W.N., “Double domain solid C60 on Si(111)7x7”, Phys. Rev. Lett., 70 , 1850-1853, (1993).



• Mortensen, K., Chen, D.M., Bedrossian, P.J., Golovchenko, J.A., Besenbacher, F., “Two reaction channels directly observed for atomic hydrogen on the Si(111)-7x7 surface”, Phys. Rev. B, 43, 1816-1819, (1991).



• Bedrossian, P.J., Mortensen, K., Chen, D.M., Golovchenko, J.A., “Adatom registry on Si(111)-( 3 x 3)R30 -B”, Phys. Rev. B, 41, 7545-7548, (1990).



• Bedrossian, P.J., Mortensen, K., Chen, D.M., Golovchenko, J.A., “Probing atomically inhomogeneous surfaces with tunneling microscopy”, Nuclear Instruments and Methods in Physics Research, B48, 296-305, (1990).



• Zegenhagen, J., Patel, J.R., Freeland, P., Chen, D.M., Golovchenko, J.A., Bedrossian, P., Northrup, J.E., “X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surface”, Phys. Rev. B, 39, 1298-1301, (1989).



• Bedrossian, P., Meade, R.D., Mortensen, K., Chen, D.M., Golovchenko, J.A., Vanderbilt, D., “Surface doping and stabilization of Si(111) with boron”, Phys. Rev. Lett., 63, 1257-1260, (1989).



• Bedrossian, P.J., Chen, D.M., Mortensen, K., Golovchenko, J.A., “Demonstration of the tunnel-diode effect on an atomic scale ”, Nature, 342, 258-260, (1989).



• Chen, D.M., Golovchenko, J.A., Bedrossian, P., Mortensen, K., “Tunneling images of gallium on a silicon surface: reconstructions, superlattices, and incommensuration”, Phys. Rev. Lett., 61, 2867-2870, (1988).